HUF75623S3

更新时间： 2024-11-29 22:37:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	200K
描述
22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs

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数据手册

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HUF75623S3 数据手册

HUF75623P3, HUF75623S3ST

Data Sheet

December 2001

22A, 100V, 0.064 Ohm, N-Channel,

UltraFET® Power MOSFETs

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

Features

• Ultra Low On-Resistance

SOURCE

DRAIN

(FLANGE)

DRAIN

GATE

- r

= 0.064Ω, V_GS= 10V

DS(ON)

• Simulation Models

GATE

- Temperature Compensated PSPICE® and SABER™

Electrical Models

SOURCE

DRAIN

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

(FLANGE)

HUF75623P3

HUF75623S3ST

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Symbol

Ordering Information

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

75623P

75623S

HUF75623P3

HUF75623S3ST

NOTE: When ordering, use the entire part number i.e., HUF75623P3

Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified

HUF75623P3, HUF75623S3ST

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

100

±20

DSS

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T = 25 C, V

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (T = 100 C, V

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Figure 4

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Figures 6, 14, 15

0.57

W/ C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T

-55 to 175

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

300

260

pkg

NOTE:

1. T = 25 C to 150 C.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

HUF75623P3, HUF75623S3ST Rev. B

12 3 4 5 6 7...10

中文翻译

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与HUF75623S3相关器件

型号	品牌	获取价格	描述	数据表
HUF75623S3S	RENESAS	获取价格	22A, 100V, 0.064ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
HUF75623S3ST	FAIRCHILD	获取价格	22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs
HUF75623S3ST	RENESAS	获取价格	22A, 100V, 0.064ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
HUF75631P3	FAIRCHILD	获取价格	33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs
HUF75631P3	INTERSIL	获取价格	33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET
HUF75631P3_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Met
HUF75631S3S	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 33A I(D) \| TO-263AB
HUF75631S3ST	FAIRCHILD	获取价格	33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs
HUF75631S3ST	ONSEMI	获取价格	100 V、33 A、40 mΩ、N 沟道 UltraFET 功率 MOSFET
HUF75631SK8	INTERSIL	获取价格	5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET

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