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HN58C256AT-10E PDF预览

HN58C256AT-10E

更新时间: 2024-01-31 18:40:25
品牌 Logo 应用领域
瑞萨 - RENESAS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
25页 241K
描述
32KX8 EEPROM 5V, 100ns, PDSO28, LEAD FREE, PLASTIC, TSOP-28

HN58C256AT-10E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TSOP
包装说明:TSSOP, TSSOP28,.53,22针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.58
最长访问时间:100 ns命令用户界面:NO
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G28长度:11.8 mm
内存密度:262144 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP28,.53,22封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH页面大小:64 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.00002 A子类别:EEPROMs
最大压摆率:0.03 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
宽度:8 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

HN58C256AT-10E 数据手册

 浏览型号HN58C256AT-10E的Datasheet PDF文件第19页浏览型号HN58C256AT-10E的Datasheet PDF文件第20页浏览型号HN58C256AT-10E的Datasheet PDF文件第21页浏览型号HN58C256AT-10E的Datasheet PDF文件第22页浏览型号HN58C256AT-10E的Datasheet PDF文件第23页浏览型号HN58C256AT-10E的Datasheet PDF文件第24页 
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