Datasheet > HMC463-Die

HMC463-Die

更新时间： 2023-12-20 18:45:15

品牌	Logo	应用领域
亚德诺 - ADI		放大器
页数	文件大小	规格书
8页	642K
描述
集成AGC的低噪声放大器芯片，2-20 GHz

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HMC463-Die 数据手册

HMC463

v11.0617

GaAs PHEMT MMIC LOW NOISE

AGC AMPLIFIER, 2 - 20 GHz

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with

conductive epoxy (see HMC general Handling, Mounting, Bonding Note).

0.102mm (0.004”) Thick GaAs MMIC

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina

thin ﬁlm substrates are recommended for bringing RF to and from the chip

(Figure 1). If 0.254mm (10 mil) thick alumina thin ﬁlm substrates must be

used, the die should be raised 0.150mm (6 mils) so that the surface of the

die is coplanar with the surface of the substrate. One way to accomplish

this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick

molybdenum heat spreader (moly-tab) which is then attached to the

ground plane (Figure 2).

Wire Bond

0.076mm

(0.003”)

RF Ground Plane

Microstrip substrates should brought as close to the die as possible in

order to minimize bond wire length. Typical die-to-substrate spacing is

0.076mm to 0.152 mm (3 to 6 mils).

0.127mm (0.005”) Thick Alumina

Thin Film Substrate

Figure 1.

Handling Precautions

Follow these precautions to avoid permanent damage.

0.102mm (0.004”) Thick GaAs MMIC

Storage: All bare die are placed in either Waffle or Gel based ESD

protective containers, and then sealed in an ESD protective bag for

shipment. Once the sealed ESD protective bag has been opened, all die

should be stored in a dry nitrogen environment.

Wire Bond

0.076mm

(0.003”)

Cleanliness: Handle the chips in a clean environment. DO NOT attempt

to clean the chip using liquid cleaning systems.

RF Ground Plane

Static Sensitivity: Follow ESD precautions to protect against ESD

strikes.

0.150mm (0.005”) Thick

Moly Tab

Transients: Suppress instrument and bias supply transients while bias is

applied. Use shielded signal and bias cables to minimize inductive pick-up.

0.254mm (0.010”) Thick Alumina

Thin Film Substrate

Figure 2.

General Handling: Handle the chip along the edges with a vacuum collet

or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with

vacuum collet, tweezers, or ﬁngers.

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.

The mounting surface should be clean and ﬂat.

Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool

temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO

NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of

scrubbing should be required for attachment.

Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy ﬁllet is observed

around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire Bonding

Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage

temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is

recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be

started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm

(12 mils).

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

Phone: 781-329-4700 • Order online at www.analog.com

1 - 8

Application Support: Phone: 1-800-ANALOG-D

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与HMC463-Die相关器件

型号	品牌	获取价格	描述	数据表
HMC463LH250	HITTITE	获取价格	GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
HMC463LH250	ADI	获取价格	集成AGC的低噪声放大器，采用SMT封装，2 - 20 GHz
HMC463LH250_10	HITTITE	获取价格	GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
HMC463LH250TR	HITTITE	获取价格	Wide Band Low Power Amplifier,
HMC463LP5	HITTITE	获取价格	GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
HMC463LP5	ADI	获取价格	集成AGC的宽带低噪声放大器，采用SMT封装，2 - 20 GHz
HMC463LP5_11	HITTITE	获取价格	GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
HMC463LP5E	HITTITE	获取价格	GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
HMC463LP5ETR	HITTITE	获取价格	Wide Band Low Power Amplifier, 2000MHz Min, 20000MHz Max, 5 X 5 MM, ROHS COMPLIANT, LEADLE
HMC464	HITTITE	获取价格	GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz

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