5秒后页面跳转
HMC463LH250_10 PDF预览

HMC463LH250_10

更新时间: 2024-11-30 12:20:31
品牌 Logo 应用领域
HITTITE 放大器
页数 文件大小 规格书
6页 262K
描述
GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz

HMC463LH250_10 数据手册

 浏览型号HMC463LH250_10的Datasheet PDF文件第2页浏览型号HMC463LH250_10的Datasheet PDF文件第3页浏览型号HMC463LH250_10的Datasheet PDF文件第4页浏览型号HMC463LH250_10的Datasheet PDF文件第5页浏览型号HMC463LH250_10的Datasheet PDF文件第6页 
HMC463LH250  
v04.1010  
GaAs pHEMT MMIC LOW NOISE  
AGC AMPLIFIER, 2 - 20 GHz  
7
Typical Applications  
The HMC463LH250 is ideal for:  
• Telecom Infrastructure  
• Microwave Radio & VSAT  
• Military EW, ECM & C3I  
• Test Instrumentation  
Features  
50 Ohm Matched Input/Output  
Hermetic SMT Package  
Gain: 14 dB  
Noise Figure: 2.5 dB @ Mid-Band  
P1dB Output Power: +18 dBm @ Mid-Band  
Supply Voltage: +5V @ 60mA  
Screening to MIL-PRF-38535 (Class B or S) Available  
• Fiber Optics  
Functional Diagram  
General Description  
The HMC463LH250 is a GaAs MMIC pHEMT Low  
Noise AGC Distributed Amplifier packaged in a  
hermetic surface mount package which operates  
between 2 and 20 GHz. The amplifier provides 13  
dB of gain, 3 dB noise figure and 18 dBm of output  
power at 1 dB gain compression while requiring only  
60 mA from a +5V supply. An optional gate bias  
(Vgg2) is provided to allow Adjustable Gain Control  
(AGC) of 8 dB typical. Gain flatness is excellent at  
0.5 dB from 2 - 14 GHz making the HMC463LH250  
ideal for EW, ECM RADAR, test equipment and  
High-Reliability applications. The HMC463LH250  
LNA I/Os are internally matched to 50 Ohms and are  
internally DC blocked.  
Electrical Specifications, TA = +25° C, Vdd= 5V, Vgg2= Open, Idd= 60 mA*  
Parameter  
Frequency Range  
Min.  
Typ.  
2.0 - 6.0  
14.5  
0.25  
0.010  
3.5  
Max.  
Min.  
Typ.  
6.0 - 16.0  
12  
Max.  
Min.  
Typ.  
Max.  
Units  
GHz  
dB  
16.0 - 20.0  
Gain  
11.5  
9
8
11  
0.9  
0.010  
4
Gain Flatness  
0.5  
dB  
Gain Variation Over Temperature  
Noise Figure  
0.010  
2.5  
dB/ °C  
dB  
5.5  
4.5  
5.5  
Input Return Loss  
15  
15  
9
dB  
Output Return Loss  
11  
15  
7
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
16  
19  
13  
18  
10  
13  
19  
24  
dBm  
dBm  
dBm  
21.5  
29  
20.5  
27  
Supply Current  
(Idd) (Vdd= 5V, Vgg1= -0.9V Typ.)  
60  
80  
60  
80  
60  
80  
mA  
* Adjust Vgg1 between -2 to -0V to achieve Idd= 60 mA typical.  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
7 - 1  

与HMC463LH250_10相关器件

型号 品牌 获取价格 描述 数据表
HMC463LH250TR HITTITE

获取价格

Wide Band Low Power Amplifier,
HMC463LP5 HITTITE

获取价格

GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
HMC463LP5 ADI

获取价格

集成AGC的宽带低噪声放大器,采用SMT封装,2 - 20 GHz
HMC463LP5_11 HITTITE

获取价格

GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
HMC463LP5E HITTITE

获取价格

GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz
HMC463LP5ETR HITTITE

获取价格

Wide Band Low Power Amplifier, 2000MHz Min, 20000MHz Max, 5 X 5 MM, ROHS COMPLIANT, LEADLE
HMC464 HITTITE

获取价格

GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz
HMC464_09 HITTITE

获取价格

GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz
HMC464-Die ADI

获取价格

宽带功率放大器芯片,2 - 20 GHz
HMC464LP5 HITTITE

获取价格

GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz