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HMC464_09 PDF预览

HMC464_09

更新时间: 2024-11-30 10:53:51
品牌 Logo 应用领域
HITTITE 放大器功率放大器
页数 文件大小 规格书
6页 250K
描述
GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz

HMC464_09 数据手册

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HMC464  
v04.0308  
GaAs PHEMT MMIC  
POWER AMPLIFIER, 2 - 20 GHz  
Typical Applications  
Features  
The HMC464 wideband driver is ideal for:  
• Telecom Infrastructure  
• Microwave Radio & VSAT  
• Military & Space  
P1dB Output Power: +26 dBm  
Gain: 16 dB  
Output IP3: +30 dBm  
3
Supply Voltage: +8.0V @ 290 mA  
50 Ohm Matched Input/Output  
Die Size: 3.12 x 1.63 x 0.1 mm  
• Test Instrumentation  
• Fiber Optics  
Functional Diagram  
General Description  
The HMC464 is a GaAs MMIC PHEMT Distributed  
Power Amplifier die which operates between 2 and  
20 GHz. The amplifier provides 16 dB of gain, +30 dBm  
Output IP3 and +26 dBm of output power at 1 dB gain  
compression while requiring 290 mA from a +8V sup-  
ply. Gain flatness is excellent from 2 - 18 GHz making  
the HMC464 ideal for EW, ECM and radar driver  
amplifier applications. The HMC464 amplifier I/O’s  
are internally matched to 50 Ohms facilitating easy  
integration into Multi-Chip-Modules (MCMs). All data  
is with the chip in a 50 Ohm test fixture connected  
via 0.025mm (1 mil) diameter wire bonds of minimal  
length 0.31mm (12 mils).  
Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*  
Parameter  
Frequency Range  
Min.  
Typ.  
2.0 - 6.0  
16  
Max.  
Min.  
Typ.  
6.0 - 18.0  
16  
Max.  
Min.  
Typ.  
18.0 - 20.0  
14  
Max.  
0.04  
Units  
GHz  
dB  
Gain  
14  
13  
11  
Gain Flatness  
0.25  
0.02  
15  
0.5  
0.75  
0.03  
13  
dB  
Gain Variation Over Temperature  
Input Return Loss  
0.03  
0.02  
17  
0.03  
dB/ °C  
dB  
Output Return Loss  
14  
12  
11  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Noise Figure  
23.5  
26.5  
28  
22  
26  
19  
22  
dBm  
dBm  
dBm  
dB  
27.5  
30  
24.5  
24  
32  
4.0  
4.0  
6.0  
Supply Current  
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)  
290  
290  
290  
mA  
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
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