HMC464
v04.0308
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
Typical Applications
Features
The HMC464 wideband driver is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
P1dB Output Power: +26 dBm
Gain: 16 dB
Output IP3: +30 dBm
3
Supply Voltage: +8.0V @ 290 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.63 x 0.1 mm
• Test Instrumentation
• Fiber Optics
Functional Diagram
General Description
The HMC464 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between 2 and
20 GHz. The amplifier provides 16 dB of gain, +30 dBm
Output IP3 and +26 dBm of output power at 1 dB gain
compression while requiring 290 mA from a +8V sup-
ply. Gain flatness is excellent from 2 - 18 GHz making
the HMC464 ideal for EW, ECM and radar driver
amplifier applications. The HMC464 amplifier I/O’s
are internally matched to 50 Ohms facilitating easy
integration into Multi-Chip-Modules (MCMs). All data
is with the chip in a 50 Ohm test fixture connected
via 0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Frequency Range
Min.
Typ.
2.0 - 6.0
16
Max.
Min.
Typ.
6.0 - 18.0
16
Max.
Min.
Typ.
18.0 - 20.0
14
Max.
0.04
Units
GHz
dB
Gain
14
13
11
Gain Flatness
0.25
0.02
15
0.5
0.75
0.03
13
dB
Gain Variation Over Temperature
Input Return Loss
0.03
0.02
17
0.03
dB/ °C
dB
Output Return Loss
14
12
11
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
23.5
26.5
28
22
26
19
22
dBm
dBm
dBm
dB
27.5
30
24.5
24
32
4.0
4.0
6.0
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
290
290
290
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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