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HMC464LP5E PDF预览

HMC464LP5E

更新时间: 2024-01-17 07:21:19
品牌 Logo 应用领域
亚德诺 - ADI 射频微波
页数 文件大小 规格书
9页 638K
描述
HMC464LP5E

HMC464LP5E 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:LCC32,.2SQ,20
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.31.00.01
风险等级:1.22特性阻抗:50 Ω
构造:COMPONENT增益:8 dB
最大输入功率 (CW):20 dBmJESD-609代码:e3
安装特点:SURFACE MOUNT功能数量:1
端子数量:32最大工作频率:20000 MHz
最小工作频率:2000 MHz最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:LCC32,.2SQ,20电源:8 V
射频/微波设备类型:WIDE BAND LOW POWER子类别:RF/Microwave Amplifiers
表面贴装:YES技术:GAAS
端子面层:Matte Tin (Sn)Base Number Matches:1

HMC464LP5E 数据手册

 浏览型号HMC464LP5E的Datasheet PDF文件第2页浏览型号HMC464LP5E的Datasheet PDF文件第3页浏览型号HMC464LP5E的Datasheet PDF文件第4页浏览型号HMC464LP5E的Datasheet PDF文件第5页浏览型号HMC464LP5E的Datasheet PDF文件第6页浏览型号HMC464LP5E的Datasheet PDF文件第7页 
HMC464LP5E  
v04.0218  
GaAs PHEMT MMIC  
POWER AMPLIFIER, 2 - 20 GHz  
Typical Applications  
Features  
The HMC464LP5E is ideal for:  
• Telecom Infrastructure  
• Microwave Radio & VSAT  
• Military EW, ECM & C3I  
• Test Instrumentation  
• Fiber Optics  
P1dB Output Power: +26 dBm  
Gain: 14 dB  
Output IP3: +30 dBm  
Supply Voltage: +8V @ 290 mA  
50 Ohm Matched Input/Output  
25 mm2 Leadless SMT Package  
Functional Diagram  
General Description  
The HMC464LP5E is a GaAs MMIC PHEMT Dis-  
tributed Power Amplifiers in leadless 5 x 5 mm  
surface mount packages which operate bet-  
ween 2 and 20 GHz. The amplifier provides 14 dB  
of gain, +30 dBm output IP3 and +26 dBm of output  
power at 1 dB gain compression while requiring  
290 mA from a +8V supply. Gain flatness is good  
from 2 - 18 GHz making the HMC464LP5E ideal for  
EW, ECM and radar driver amplifiers as well as test  
equipment applications. The wideband amplifier I/O’s  
are internally matched to 50 Ohms.  
[1]  
Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA  
Parameter  
Frequency Range  
Min.  
Typ.  
2.0 - 6.0  
14  
Max.  
Min.  
Typ.  
6.0 - 16.0  
13.5  
0.5  
Max.  
Min.  
Typ.  
Max.  
0.06  
Units  
GHz  
dB  
16.0 - 20.0  
Gain  
12  
11.5  
8
11  
1.0  
0.05  
7
Gain Flatness  
0.5  
dB  
Gain Variation Over Temperature  
Input Return Loss  
Output Return Loss  
0.025  
15  
0.035  
0.03  
10  
0.04  
dB/ °C  
dB  
15  
9
11  
dB  
Output Power for 1 dB Compression  
(P1dB)  
23.5  
26.5  
22  
25  
18  
21  
dBm  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Noise Figure  
27.5  
32  
26  
26  
24.0  
22  
dBm  
dBm  
dB  
4.0  
4.0  
6.0  
Supply Current  
(Idd) (Vdd= 8V, Vgg= -0.5V Typ.)  
290  
290  
290  
mA  
[1] Adjust Vgg1 between -2 to 0V to achieve Idd = 290 mA typical.  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registered trademarks are the property of their respective owners.  
For price, delivery, and to place orders: Analog Devices, Inc.,  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106  
Phone: 781-329-4700 • Order online at www.analog.com  
Application Support: Phone: 1-800-ANALOG-D  
1

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