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HMC464LP5TR PDF预览

HMC464LP5TR

更新时间: 2024-02-11 04:18:16
品牌 Logo 应用领域
HITTITE 射频微波
页数 文件大小 规格书
6页 236K
描述
Wide Band Low Power Amplifier,

HMC464LP5TR 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.65射频/微波设备类型:WIDE BAND LOW POWER
Base Number Matches:1

HMC464LP5TR 数据手册

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HMC464LP5 / 464LP5E  
v03.0308  
GaAs PHEMT MMIC  
POWER AMPLIFIER, 2 - 20 GHz  
Typical Applications  
Features  
The HMC464LP5 / HMC464LP5E is ideal for:  
• Telecom Infrastructure  
• Microwave Radio & VSAT  
• Military EW, ECM & C3I  
• Test Instrumentation  
P1dB Output Power: +26 dBm  
Gain: 14 dB  
Output IP3: +30 dBm  
Supply Voltage: +8V @ 290 mA  
50 Ohm Matched Input/Output  
25 mm2 Leadless SMT Package  
11  
• Fiber Optics  
Functional Diagram  
General Description  
The HMC464LP5 & HMC464LP5E are GaAs MMIC  
PHEMT Distributed Power Amplifiers in leadless 5 x  
5 mm surface mount packages which operate bet-  
ween 2 and 20 GHz. The amplifier provides 14 dB  
of gain, +30 dBm output IP3 and +26 dBm of output  
power at 1 dB gain compression while requiring  
290 mA from a +8V supply. Gain flatness is good  
from 2 - 18 GHz making the HMC464LP5(E) ideal for  
EW, ECM and radar driver amplifiers as well as test  
equipment applications. The wideband amplifier I/O’s  
are internally matched to 50 Ohms.  
[1]  
Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA  
Parameter  
Frequency Range  
Min.  
Typ.  
2.0 - 6.0  
14  
Max.  
Min.  
Typ.  
6.0 - 16.0  
13.5  
0.5  
Max.  
Min.  
Typ.  
Max.  
0.06  
Units  
GHz  
dB  
16.0 - 20.0  
Gain  
12  
11.5  
8
11  
1.0  
0.05  
7
Gain Flatness  
0.5  
dB  
Gain Variation Over Temperature  
Input Return Loss  
Output Return Loss  
0.025  
15  
0.035  
0.03  
10  
0.04  
dB/ °C  
dB  
15  
9
11  
dB  
Output Power for 1 dB Compression  
(P1dB)  
23.5  
26.5  
22  
25  
18  
21  
dBm  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Noise Figure  
27.5  
32  
26  
26  
24.0  
22  
dBm  
dBm  
dB  
4.0  
4.0  
6.0  
Supply Current  
(Idd) (Vdd= 8V, Vgg= -0.5V Typ.)  
290  
290  
290  
mA  
[1] Adjust Vgg1 between -2 to 0V to achieve Idd = 290 mA typical.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 258  

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