Datasheet > HMC464LP5_09

HMC464LP5_09

更新时间： 2022-11-07 16:44:19

品牌	Logo	应用领域
HITTITE		放大器功率放大器
页数	文件大小	规格书
6页	237K
描述
GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz

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HMC464LP5_09 数据手册

HMC464LP5 / 464LP5E

v03.0308

GaAs PHEMT MMIC

POWER AMPLIFIER, 2 - 20 GHz

Typical Applications

Features

The HMC464LP5 / HMC464LP5E is ideal for:

• Telecom Infrastructure

• Microwave Radio & VSAT

• Military EW, ECM & C³I

• Test Instrumentation

P1dB Output Power: +26 dBm

Gain: 14 dB

Output IP3: +30 dBm

Supply Voltage: +8V @ 290 mA

50 Ohm Matched Input/Output

25 mm²Leadless SMT Package

• Fiber Optics

Functional Diagram

General Description

The HMC464LP5 & HMC464LP5E are GaAs MMIC

PHEMT Distributed Power Ampliﬁers in leadless 5 x

5 mm surface mount packages which operate bet-

ween 2 and 20 GHz. The ampliﬁer provides 14 dB

of gain, +30 dBm output IP3 and +26 dBm of output

power at 1 dB gain compression while requiring

290 mA from a +8V supply. Gain ﬂatness is good

from 2 - 18 GHz making the HMC464LP5(E) ideal for

EW, ECM and radar driver ampliﬁers as well as test

equipment applications. The wideband ampliﬁer I/O’s

are internally matched to 50 Ohms.

[1]

Electrical Speciﬁcations, T_A= +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA

Parameter

Frequency Range

Min.

Typ.

2.0 - 6.0

Max.

Min.

Typ.

6.0 - 16.0

13.5

0.5

Max.

Min.

Typ.

Max.

0.06

Units

GHz

16.0 - 20.0

Gain

11.5

1.0

0.05

Gain Flatness

0.5

Gain Variation Over Temperature

Input Return Loss

Output Return Loss

0.025

0.035

0.03

0.04

dB/ °C

Output Power for 1 dB Compression

(P1dB)

23.5

26.5

dBm

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

27.5

24.0

dBm

4.0

6.0

Supply Current

(Idd) (Vdd= 8V, Vgg= -0.5V Typ.)

290

[1] Adjust Vgg1 between -2 to 0V to achieve Idd = 290 mA typical.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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