HMC464
v02.0704
MICROWAVE CORPORATION
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
Typical Applications
Features
+26 dBm P1dB Output Power
1
The HMC464 wideband driver is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
Gain: 16 dB
+30 dBm Output IP3
Supply Voltage: +8.0V @ 290 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
• Test Instrumentation
• Fiber Optics
Functional Diagram
General Description
The HMC464 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between 2 and
20 GHz. The amplifier provides 16 dB of gain, +30
dBm Output IP3 and +26 dBm of output power
at 1 dB gain compression while requiring 290 mA
from a +8V supply. Gain flatness is excellent from
2 - 18 GHz making the HMC464 ideal for EW,
ECM and radar driver amplifier applications. The
HMC464 amplifier I/O’s are internally matched to
50 Ohms facilitating easy integration into Multi-
Chip-Modules (MCMs). All data is with the chip
in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
Electrical Specifications,TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Min.
Typ.
2.0 - 6.0
16
Max.
Min.
Typ.
6.0 - 18.0
16
Max.
Min.
Typ.
18.0 - 20.0
14
Max.
0.04
Units
GHz
dB
Frequency Range
Gain
14
13
11
Gain Flatness
0.25
0.02
15
0.5
0.75
0.03
13
dB
Gain Variation Over Temperature
Input Return Loss
0.03
0.02
17
0.03
dB/ °C
dB
Output Return Loss
14
12
11
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
23.5
26.5
28
22
26
19
22
dBm
dBm
dBm
dB
27.5
30
24.5
24
32
4.0
4.0
6.0
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
290
290
290
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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