Datasheet > 射频和微波 > 射频/微波放大器> HMC463LH250

HMC463LH250

更新时间： 2024-01-06 19:31:25

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器
页数	文件大小	规格书
6页	350K
描述
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz

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技术参数
数据手册

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HMC463LH250 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	LCC12,.25SQ
针数：	12	Reach Compliance Code：	compliant
风险等级：	5.27	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	12
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装主体材料：	CERAMIC	封装等效代码：	LCC12,.25SQ
电源：	5 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	80 mA
表面贴装：	YES	技术：	GAAS

HMC463LH250 数据手册

HMC463LH250

v01.0107

GaAs PHEMT MMIC LOW NOISE

AGC AMPLIFIER, 2 - 20 GHz

Typical Applications

The HMC463LH250 is ideal for:

• Telecom Infrastructure

• Microwave Radio & VSAT

• Military EW, ECM & C³I

• Test Instrumentation

Features

50 Ohm Matched Input/Output

Hermetic SMT Package

Gain: 14 dB

Noise Figure: 2.5 dB @ Mid-Band

P1dB Output Power: +18 dBm @ Mid-Band

Supply Voltage: +5.0V @ 60 mA

Screening to MIL-PRF-38535 (Class B or S) Available

• Fiber Optics

Functional Diagram

General Description

The HMC463LH250 is a GaAs MMIC PHEMT Low

Noise AGC Distributed Ampliﬁer packaged in a

hermetic surface mount package which operates

between 2 and 20 GHz. The ampliﬁer provides 13

dB of gain, 3.0 dB noise ﬁgure and 18 dBm of output

power at 1 dB gain compression while requiring only

60 mA from a +5V supply. An optional gate bias

(Vgg2) is provided to allow Adjustable Gain Control

(AGC) of 8 dB typical. Gain ﬂatness is excellent at

0.5 dB from 2 - 14 GHz making the HMC463LH250

ideal for EW, ECM RADAR, test equipment and High-

Reliability applications. The HMC463LH250 LNA I/Os

are internally matched to 50 Ohms and are internally

DC blocked.

Electrical Specifications, T_A= +25° C, Vdd= 5V, Vgg2= Open, Idd= 60 mA*

Parameter

Frequency Range

Min.

Typ.

2.0 - 6.0

14.5

0.25

0.010

3.5

Max.

Min.

Typ.

6.0 - 16.0

Max.

Min.

Typ.

Max.

Units

GHz

16.0 - 20.0

Gain

11.5

0.9

0.010

Gain Flatness

0.5

Gain Variation Over Temperature

Noise Figure

0.010

2.5

dB/ °C

5.5

4.5

5.5

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

dBm

21.5

20.5

Supply Current

(Idd) (Vdd= 5V, Vgg1= -0.9V Typ.)

* Adjust Vgg1 between -2 to -0V to achieve Idd= 60 mA typical.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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