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HFA16TA60CPBF

更新时间： 2024-09-15 05:35:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
6页 208K
描述
Ultrafast Soft Recovery Diode, 2 x 8 A

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中文翻译

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HFA16TA60CPBF 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：R-PSFM-T3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.41Is Samacsys：N
其他特性：LOW NOISE, LOW POWER LOSS应用：EFFICIENCY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.7 VJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大非重复峰值正向电流：60 A元件数量：2
相数：1端子数量：3
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：8 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT APPLICABLE认证状态：Not Qualified
最大重复峰值反向电压：600 V最大反向恢复时间：0.055 µs
子类别：Rectifier Diodes表面贴装：NO
端子面层：MATTE TIN OVER NICKEL端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT APPLICABLE
Base Number Matches：1

HFA16TA60CPBF 数据手册

 浏览型号HFA16TA60CPBF的Datasheet PDF文件第2页浏览型号HFA16TA60CPBF的Datasheet PDF文件第3页浏览型号HFA16TA60CPBF的Datasheet PDF文件第4页浏览型号HFA16TA60CPBF的Datasheet PDF文件第5页浏览型号HFA16TA60CPBF的Datasheet PDF文件第6页 
HFA16TA60CPbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 8 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
Available  
• Very low IRRM  
• Very low Qrr  
RoHS*  
COMPLIANT  
• Specified at operating conditions  
• Lead (Pb)-free  
• Designed and qualified for industrial level  
Base  
common  
BENEFITS  
• Reduced RFI and EMI  
cathode  
2
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
2
Common  
DESCRIPTION  
cathode  
Anode  
Anode  
HFA16TA60C is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial construction  
and advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 600 V and 8 A per leg continuous  
current, the HFA16TA60C is especially well suited for use as  
the companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the  
tb portion of recovery. The HEXFRED features combine to  
offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA16TA60C is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
1
3
TO-220AB  
PRODUCT SUMMARY  
VR  
VF at 8 A at 25 °C  
IF(AV)  
600 V  
1.7 V  
2 x 8 A  
18 ns  
trr (typical)  
TJ (maximum)  
Qrr  
150 °C  
65 nC  
dI(rec)M/dt  
240 A/µs  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
600  
V
per leg  
per device  
8
Maximum continuous forward current  
IF  
TC = 100 °C  
16  
A
Single pulse forward current  
IFSM  
IFRM  
60  
Maximum repetitive forward current  
24  
TC = 25 °C  
36  
14  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94058  
Revision: 25-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1
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中文翻译

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HFA16TA60CPBF 替代型号

型号 品牌 替代类型 描述 数据表
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