Datasheet > HFA16TB120PBF_11

HFA16TB120PBF_11

更新时间： 2024-11-06 10:47:47

品牌	Logo	应用领域
威世 - VISHAY		二极管软恢复二极管
页数	文件大小	规格书
8页	163K
描述
HEXFRED Ultrasoft Soft Recovery Diode, 16 A

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HFA16TB120PBF_11 数据手册

VS-HFA16TB120PbF

Vishay Semiconductors

HEXFRED^®

Ultrasoft Soft Recovery Diode, 16 A

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I_RRMand Q_rr

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

Base

cathode

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA16TB120PbF is a state of the art ultrafast recovery

diode. Employing the latest in epitaxial construction and

advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 1200 V and 16 A continuous current,

the VS-HFA16TB120PbF is especially well suited for use as

the companion diode for IGBTs and MOSFETs. In addition

to ultrafast recovery time, the HEXFRED^®product line

features extremely low values of peak recovery current

(I_RRM) and does not exhibit any tendency to “snap-off”

during the t_bportion of recovery. The HEXFRED features

combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the

switching transistor. These HEXFRED advantages can help

to significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA16TB120PbF is

ideally suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

Cathode Anode

TO-220AC

PRODUCT SUMMARY

Package

TO-220AC

16 A

I_F(AV)

V_R

1200 V

3.0 V

V_Fat I_F

t_rr(typ.)

T_Jmax.

Diode variation

30 ns

150 °C

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

1200

Maximum continuous forward current

Single pulse forward current

I_F

T_C= 100 °C

I_FSM

I_FRM

190

Maximum repetitive forward current

151

T_C= 25 °C

Maximum power dissipation

P_D

_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

- 55 to + 150

°C

Document Number: 94060

Revision: 24-May-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与HFA16TB120PBF_11相关器件

型号	品牌	获取价格	描述	数据表
HFA16TB120S	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 16 A
HFA16TB120S	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA16TB120SPBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 16 A
HFA16TB120STRLPBF	INFINEON	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 16A, Silicon, D2PAK-3
HFA16TB120STRR	INFINEON	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 16A, 1200V V(RRM), Silicon, D2PAK-3
HFA180NH40	ETC	获取价格	400V 180A HEXFRED Discrete Diode in a D-67 Half-Pak package
HFA180NH40PBF	VISHAY	获取价格	HEXFRED® Ultrafast Soft Recovery Diode, 180 A
HFA180NH40R	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA2	HF	获取价格	强制导向继电器
HFA2/1102ZST	HF	获取价格	印制板式

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