HFA16TB120S

更新时间： 2024-09-16 04:21:31

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管软恢复二极管
页数	文件大小	规格书
7页	182K
描述
Ultrafast, Soft Recovery Diode

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HFA16TB120S 数据手册

Bulletin PD -20605A rev. B 10/05

HFA16TB120S

Ultrafast, Soft Recovery Diode

HEXFRED^TM

V_R= 1200V

V_F(typ.)* = 2.3V

I_F(AV)= 16A

(K)

BASE

Features

Ultrafast Recovery

Ultrasoft Recovery

Very Low I_RRM

Very Low Q_rr

Specified at Operating Conditions

Q_rr(typ.)= 260nC

I_RRM(typ.) = 5.8A

t_rr(typ.) = 30ns

Benefits

(N/C)

(A)

Reduced RFI and EMI

Reduced Power Loss in Diode and Switching

Transistor

di_(rec)M/dt (typ.)* = 76A/µs

Higher Frequency Operation

Reduced Snubbing

Reduced Parts Count

Description

International Rectifier's HFA16TB120S is a state of the art ultra fast recovery

diode. Employing the latest in epitaxial construction and advanced processing

techniques it features a superb combination of characteristics which result in

performance which is unsurpassed by any rectifier previously available. With

basic ratings of 1200 volts and 16 amps continuous current, the HFA16TB120S

is especially well suited for use as the companion diode for IGBTs and

MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line

features extremely low values of peak recovery current (I_RRM) and does not

D²Pak

exhibit any tendency to "snap-off" during the t_bportion of recovery. The

HEXFRED features combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the switching transistor.

These HEXFRED advantages can help to significantly reduce snubbing,

component count and heatsink sizes. The HEXFRED HFA16TB120S is ideally

suited for applications in power supplies and power conversion systems (such

as inverters), motor drives, and many other similar applications where high

speed, high efficiency is needed.

Absolute Maximum Ratings

Parameter

Max

Units

V_R

Cathode-to-Anode Voltage

1200

I_F@ T_C= 100°C

I_FSM

Continuous Forward Current

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Power Dissipation

190

I_FRM

P_D@ T_C= 25°C

151

°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

* 125°C

12 3 4 5 6 7

中文翻译

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