Datasheet > HFA16TB120STRR

HFA16TB120STRR

更新时间： 2024-11-06 21:22:19

品牌	Logo	应用领域
英飞凌 - INFINEON		超快软恢复二极管快速软恢复二极管局域网
页数	文件大小	规格书
7页	141K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 16A, 1200V V(RRM), Silicon, D2PAK-3

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HFA16TB120STRR 数据手册

Bulletin PD -20605 rev. B 11/00

HFA16TB120S

HEXFRED

Ultrafast,SoftRecoveryDiode

BASE

CATHODE

V_R= 1200V

V_F(typ.)* = 2.3V

I_F(AV)= 16A

Q_rr(typ.)=260nC

I_RRM(typ.) = 5.8A

Features

• Ultrafast Recovery

• Ultrasoft Recovery

• Very Low I_RRM

• Very Low Q_rr

• Specified at Operating Conditions

t_rr(typ.) = 30ns

di_(rec)M/dt (typ.)* = 76A/µs

Benefits

ANODE

CATHODE

• Reduced RFI and EMI

• Reduced Power Loss in Diode and Switching

Transistor

• Higher Frequency Operation

• Reduced Snubbing

• Reduced Parts Count

Description

International Rectifier's HFA16TB120S is a state of the art ultra fast recovery

diode. Employing the latest in epitaxial construction and advanced processing

techniques it features a superb combination of characteristics which result in

performance which is unsurpassed by any rectifier previously available. With

basic ratings of 1200 volts and 16 amps continuous current, the HFA16TB120S

is especially well suited for use as the companion diode for IGBTs and

MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line

features extremely low values of peak recovery current (I_RRM) and does not

D²Pak

exhibit any tendency to "snap-off" during the t_bportion of recovery. The

HEXFRED features combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to significantly reduce

snubbing, component count and heatsink sizes. The HEXFRED HFA16TB120S

is ideally suited for applications in power supplies and power conversion

systems (such as inverters), motor drives, and many other similar applications

where high speed, high efficiency is needed.

Absolute Maximum Ratings

Parameter

Max

Units

V_R

Cathode-to-Anode Voltage

Continuous Forward Current

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Power Dissipation

Operating Junction and

1200

I_F@ T_C= 100°C

I_FSM

I_FRM

P_D@ T_C= 25°C

P_D@ T_C= 100°C

T_J

190

151

°C

-55 to +150

T_STG

Storage Temperature Range

* 125°C

12 3 4 5 6 7

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