HFA16TB120S

更新时间： 2024-11-06 10:47:47

品牌	Logo	应用领域
威世 - VISHAY		二极管超快软恢复二极管
页数	文件大小	规格书
6页	162K
描述
Ultrafast Soft Recovery Diode, 16 A

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HFA16TB120S 数据手册

HFA16TB120S

Vishay High Power Products

HEXFRED^®

Ultrafast Soft Recovery Diode, 16 A

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I_RRM

• Very low Q_rr

• Specified at operating conditions

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

N/C

Anode

DESCRIPTION

D²PAK

HFA16TB120S is a state of the art ultrafast recovery diode.

Employing the latest in epitaxial construction and advanced

processing techniques it features a superb combination of

characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic

ratings of 1200 V and 16 A continuous current, the

HFA16TB120S is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED^®product line features

extremely low values of peak recovery current (I_RRM) and

does not exhibit any tendency to “snap-off” during the

t_bportion of recovery. The HEXFRED features combine to

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED HFA16TB120S is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

PRODUCT SUMMARY

V_R

V_Fat 16 A at 25 °C

I_F(AV)

1200 V

3 V

16 A

t_rr(typical)

30 ns

150 °C

260 nC

76 A/µs

5.8 A

T_J(maximum)

Q_rr(typical)

dI_(rec)M/dt (typical) at 125 °C

I_RRM(typical)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

MAX.

UNITS

Cathode to anode voltage

1200

Maximum continuous forward current

Single pulse forward current

I_F

T_C= 100 °C

I_FSM

I_FRM

190

Maximum repetitive forward current

151

T_C= 25 °C

Maximum power dissipation

P_D

_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

- 55 to + 150

°C

Document Number: 93075

Revision: 22-Oct-08

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

12 3 4 5 6

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与HFA16TB120S相关器件

型号	品牌	获取价格	描述	数据表
HFA16TB120SPBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 16 A
HFA16TB120STRLPBF	INFINEON	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 16A, Silicon, D2PAK-3
HFA16TB120STRR	INFINEON	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 16A, 1200V V(RRM), Silicon, D2PAK-3
HFA180NH40	ETC	获取价格	400V 180A HEXFRED Discrete Diode in a D-67 Half-Pak package
HFA180NH40PBF	VISHAY	获取价格	HEXFRED® Ultrafast Soft Recovery Diode, 180 A
HFA180NH40R	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA2	HF	获取价格	强制导向继电器
HFA2/1102ZST	HF	获取价格	印制板式
HFA2/1102ZSTF	HF	获取价格	印制板式
HFA2/1102ZSTFG	HF	获取价格	印制板式

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