Bulletin PD-2.342 rev. A 11/00
HFA16TA60C
TM
HEXFRED
Ultrafast, Soft Recovery Diode
2
Features
VR = 600V
VF(typ.)* = 1.7V
Qrr *= 65nC
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
di(rec)M/dt * = 240A/µs
• Specified at Operating Conditions
Benefits
*125°C
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
1
3
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA16TA60C is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
TO-220AB
processing techniques it features
a superb combination of characteristics
which result in performance which is unsurpassed by any rectifier previously
available. With basic ratings of 600 volts and 15 amps per Leg continuous
current, the HFA16TA60C is especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current
(IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of
recovery. The HEXFRED features combine to offer designers a rectifier with
lower noise and significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help to significantly
reduce snubbing, component count and heatsink sizes. The HEXFRED
HFA16TA60C is ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings (per Leg)
Parameter
Max
600
8.0
60
Units
VR
Cathode-to-Anode Voltage
V
IF @ TC = 100°C Continuous Forward Current
IFSM
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
A
IFRM
24
PD @ TC = 25°C
36
14
C
PD @ TC = 100°C Maximum Power Dissipation
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to +150
W
1