H5N3007FN

更新时间： 2024-02-06 08:47:44

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
4页	79K
描述
Silicon N Channel MOS FET High Speed Power Switching

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中文翻译

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数据手册

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H5N3007FN 数据手册

H5N3007FN

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1860-0100

Rev.1.00

Nov 09, 2009

Features

•

Low on-resistance

Low leakage current

High speed switching

Built-in fast recovery diode

Outline

RENESAS Package code: PRSS0003AB-A

(Package name: TO-220FN)

1. Gate

2. Drain

3. Source

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

300

±30

Gate to source voltage

Drain current

Note1

Drain peak current

I_{D (pulse)}

I_DR

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

Note1

I_{DR (pulse)}

Note3

I_AP

Note3

Avalanche energy

E_AR

13.5

3.57

°C/W

°C

Channel to case thermal impedance

Channel dissipation

θch-c

Pch ^Note2

Tch

Channel temperature

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. STch = 25°C, Tch ≤ 150°C

REJ03G1860-0100 Rev.1.00 Nov 09, 2009

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