H5N5006DL

更新时间： 2024-09-09 07:02:35

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
8页	93K
描述
Silicon N Channel MOS FET High Speed Power Switching

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数据手册

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H5N5006DL 数据手册

H5N5006DL, H5N5006DS

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G0397-0100

Rev.1.00

May 30, 2006

Features

•

Low on-resistance: R_DS(on)= 2.5 Ω typ.

Low leakage current: I_DSS= 1 µA max. (at V_DS= 500 V)

High speed switching: t_f= 15 ns typ. (at V_GS= 10 V, V_DD250 V, I_D= 1.5 A)

Low gate charge: Qg = 14 nC typ. (at V_DD= 400 V, V_GS= 10 V, I_D= 3 A)

Avalanche ratings

Outline

RENESAS Package code: PRSS0004ZD-B

(Package name: DPAK (L)-(2) )

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK (S) )

1. Gate

2. Drain

3. Source

4. Drain

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

500

Gate to source voltage

±30

Drain current

Note1

Drain peak current

I_{D (pulse)}

I_DR

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

Note1

I_{DR (pulse)}

Note3

I_AP

Channel dissipation

Pch ^Note2

θch-c

Tch

°C/W

°C

Channel to case thermal impedance

Channel temperature

4.17

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. STch = 25°C, Tch ≤ 150°C

Rev.1.00, May 30, 2006, page 1 of 7

12 3 4 5 6 7 8

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