Datasheet > H5N5016PL

H5N5016PL

更新时间： 2024-09-09 07:02:35

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	102K
描述
Silicon N Channel MOS FET High Speed Power Switching

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H5N5016PL 数据手册

H5N5016PL

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G0175-0200Z

Rev.2.00

Jul.02.2004

Features

•

Low on-resistance

Low leakage current

High speed switching

Built-in fast recovery diode

Outline

TO-3PL

1. Gate

2. Drain

(Flange)

3. Source

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Symbol

Ratings

Unit

V_DSS

V_GSS

I_D

500

±30

Gate to source voltage

Drain current

Drain peak current

I_D(pulse)^Note1

200

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

I_DR

I_DR(pulse)^Note1

200

Note3

I_AP

Note3

Avalanche energy

E_AR

5.5

°C /W

°C

Channel dissipation

Pch^{Note 2}

θch-c

Tch

250

0.5

Channel to case Thermal Impedance

Channel temperature

150

–55 to +150

Storage temperature

Tstg

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. STch = 25°C, Tch ≤ 150°C

Rev.2.00, Jul.02.2004, page 1 of 6

12 3 4 5 6 7

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