生命周期: | Not Recommended | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.29 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 3.5 A | 最大漏极电流 (ID): | 3.5 A |
最大漏源导通电阻: | 3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 50 W |
最大脉冲漏极电流 (IDM): | 14 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
H5N5006LSTL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N5007P | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N5007P-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N5012P | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N5012P-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N5015P | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N5015P-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N5016PL | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N6001P | RENESAS |
获取价格 |
Silicon N-Channel MOSFET High-Speed Power Switching | |
H5N6001P_05 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |