Datasheet > H5N5001FM_05

H5N5001FM_05

更新时间： 2024-01-12 23:01:05

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	186K
描述
Silicon N Channel MOS FET High Speed Power Switching

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H5N5001FM_05 数据手册

H5N5001FM

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1112-0200

(Previous: ADE-208-1380)

Rev.2.00

Sep 07, 2005

Features

•

Low on-resistance: R _{DS (on)}=1.1 Ω typ.

Low leakage current: I_DSS=1 µA max (at V_DS= 500 V)

High speed switching: t_f= 15ns typ (at V_GS= 10 V, V_DD= 250 V, I_D= 2.5 A)

Low gate charge: Qg = 15nC typ (at V_DD= 400 V, V_GS= 10 V, I_D= 5 A)

Avalanche ratings

Outline

RENESAS Package code: PRSS0003AD-A

(Package name: TO-220FM)

1. Gate

2. Drain

3. Source

Rev.2.00 Sep 07, 2005 page 1 of 6

12 3 4 5 6 7

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