Datasheet > H5N5004PL_05

H5N5004PL_05

更新时间： 2024-02-08 10:05:53

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
4页	55K
描述
Silicon N Channel MOS FET High Speed Power Switching

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H5N5004PL_05 数据手册

H5N5004PL

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1113-0200

(Previous: ADE-208-1381)

Rev.2.00

Sep 07, 2005

Features

•

Low on-resistance: R _{DS (on)}= 0.09 Ω typ.

Low leakage current: I_DSS= 10 µA max (at V_DS= 500 V)

High speed switching: t_f= 280 ns typ (at V_GS= 10 V, V_DD= 250 V, I_D= 25 A)

Low gate charge: Qg = 220 nC typ (at V_DD= 400 V, V_GS= 10 V, I_D= 50 A)

Avalanche ratings

Built-in fast recovery diode: trr = 190 ns typ

Outline

RENESAS Package code: PRSS0004ZF-A

(Package name: TO-3PL)

1. Gate

2. Drain (Flange)

3. Source

Rev.2.00 Sep 07, 2005 page 1 of 3

12 3 4

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