H5N3008P

更新时间： 2024-01-29 02:14:09

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	111K
描述
Silicon N Channel MOS FET High Speed Power Switching

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中文翻译

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数据手册

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H5N3008P 数据手册

H5N3008P

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G0539-0300

Rev.3.00

Oct 16, 2006

Features

•

Low on-resistance

Low leakage current

High speed switching

Built-in fast recovery diode

Outline

RENESAS Package code: PRSS0004ZE-A

(Package name: TO-3P)

1. Gate

2. Drain (Flange)

3. Source

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to Source voltage

Gate to Source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

300

±30

Unit

Note1

Drain peak current

I_{D (pulse)}

160

Body-Drain diode reverse Drain current

Avalanche current

I_DR

Note3

I_AP

Channel dissipation

Pch ^Note2

150

°C

Channel temperature

Tch

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. STch = 25°C, Tch ≤ 150°C

Rev.3.00 Oct 16, 2006 page 1 of 6

12 3 4 5 6 7

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