是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220FN | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 300 V |
最大漏极电流 (Abs) (ID): | 15 A | 最大漏极电流 (ID): | 15 A |
最大漏源导通电阻: | 0.16 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 35 W |
最大脉冲漏极电流 (IDM): | 60 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
H5N3008P | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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H5N3008P-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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H5N3011P | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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H5N3011P-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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H5N5001FM | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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H5N5001FM_05 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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H5N5001FM-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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H5N5004PL | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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H5N5004PL_05 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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H5N5004PL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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