是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
Factory Lead Time: | 1 week | 风险等级: | 5.82 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 15 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 35 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
H5N3007FL-M0-ET2 | RENESAS |
获取价格 |
300V - 15A - MOS FET High Speed Power Switching | |
H5N3007FN | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N3007FN-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N3008P | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N3008P-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N3011P | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N3011P-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N5001FM | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N5001FM_05 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H5N5001FM-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |