Datasheet > GMBT194A

GMBT194A

更新时间： 2024-09-17 03:39:39

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	354K
描述
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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数据手册

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GMBT194A 数据手册

ISSUED DATE :2006/06/07

REVISED DATE :

GTM

CORPORATION

GMBT194A

N P N S I L I CO N PL AN AR M E D I U M P O W E R T R AN S I ST O R

Description

The GMBT194A is designed for medium power amplifier applications.

Features

Ԧ1 Amp continuous current

ԦComplementary to GMBT195A

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min. Max.

Millimeter

Min. Max.

1.90 REF.

REF.

2.70

2.40

1.40

0.35

3.10

2.80

1.60

0.50

0.10

0.55

1.00

1.30

0.20

0.10

0.40

0.85

0°

1.15

10°

0.45

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

+150

Unit

Junction Temperature

Storage Temperature

Tstg

-65~+150

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

CBO

CEO

EBO

Collector Current (Pulse)

Total Power Dissipation(Note1)

Note 1.Device mounted on FR-4=1.6*1.6*0.06in

500

Electrical Characteristics (Ta = 25к, unless otherwise stated)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

*BVCEO

BVEBO

=100uA , I

=10mA, I

=100uA ,I

CBO

CES

EBO

100

0.3

0.5

1.1

1.0

900

CB=30V, I

CES=30V

EB=4V, I

=50mA

=100mA

*VCE(sat)

*VBE(sat)

*VBE(on)

=500mA, IB

=1A, I

CE=5V, I

=1A

=1mA

*hFE

300

200

150

=500mA

=1A

=2A

MHz

CE=10V, I =50mA, f=100MHz

CB=10V, IE=0, f=1MHz

Cob

*Measured under pulse condition. Pulse width=300ꢀs, Duty CycleЉ2%

Classification Of hFE2

Rank

Range

300 ~ 700

500 ~ 900

GMBT194A

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