Datasheet > GMBTA13

GMBTA13

更新时间： 2024-01-21 07:28:06

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
2页	232K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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技术参数
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GMBTA13 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

GMBTA13 数据手册

ISSUED DATE :2003/07/15

REVISED DATE :2006/05/09B

GTM

CORPORATION

GMBTA13

N P N E P I T AX I A L S I L I C O N T R A N S I S T O R

Description

The GMBTA13 is designed for Darlington Amplifier Transistor.

Features

*High D.C. Current Gain

*Collector-Emitter Voltage VCES=30V

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Min.

Max.

2.70

2.40

1.40

0.35

1.90 REF.

1.00

0.10

0.40

0.85

0°

1.30

0.20

1.15

10°

0.45

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

+150

-55 ~ +150

Unit

Junction Temperature

Storage Temperature

Tstg

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

CBO

CES

EBO

ꢀJA

ꢀJC

Thermal Resistance Junction to Ambient

Thermal Resistance Junction to Case

Collector Current

556

к/W

170

500

Total Power Dissipation

225

Electrical Characteristics (Ta = 25к,unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

=100uA ,I

=100uA ,VBE=0

=10uA ,I =0

CB=30V, I = 0

EB=10V, Ic = 0

=100mA, I =0.1mA

E=0

BVCES

BVEBO

CBO

EBO

100

1.5

2.0

*VCE(sat)

*VBE(on)

*hFE1

*hFE2

CE=5V, I

=100mA

10k

125

=10mA

=100mA

MHz

=10mA, f=100MHz

Cob

CB=10V, IE=0, f=1MHz

Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%

GMBTA13

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