Datasheet > GMBT3904

GMBT3904

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	208K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GMBT3904 数据手册

ISSUED DATE :2003/12/12

REVISED DATE :2005/06/15B

GTM

CORPORATION

GMBT3904

N P N E P I T AX I A L P L A N A R T R A N S I S T O R

Description

The GMBT3904 is designed for general purpose switching and amplifier applications.

Features

*Pb-free package are available

*Collector-emitter voltage 40V

*Complementary to GMBT3906

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

0.10

0.40

0.85

0̓

1.30

0.20

1.15

10̓

0.45

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

+150

-65 ~ +150

Unit

Tstg

VCBO

VCEO

VEBO

200

350

Total Power Dissipation

Characteristics at Ta = 25к

Symbol

BVCBO

Min.

Typ.

Max.

Unit

Test Conditions

IC=10uA , IE=0

BVCEO

BVEBO

ICEX

IC=1mA , IB=0

IE=10uA, IC=0

VCE=30V, VEB=3V

VEB=3V

IC=10mA, IB=1mA

IC=50mA, IB=5mA

IC=10mA, IB=1mA

IC=50mA, IB=5mA

VCE=1V, IC=0.1mA

VCE=1V, IC=1mA

VCE=1V, IC=10mA

VCE=1V, IC=50mA

VCE=1V, IC=100mA

200

300

850

950

IEBO

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

650

hFE

100

300

MHz

VCE=20V, IE=-10mA, f=100MHz

VCB=10V, f=100KHz

Cob

Cib

VEB=0.5V, f=100KHz

200

VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA

VCC=3V, IC=10mA, IB1=-IB2=1mA

tstg

VCC=3V, IC=10mA, IB1=-IB2=1mA

GMBT3904

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