Datasheet > GMBT8550L

GMBT8550L

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
2页	227K
描述
PNP EPITAXIAL TRANSISTOR

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数据手册

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GMBT8550L 数据手册

ISSUED DATE :2004/08/27

REVISED DATE :

GTM CORPORATION

GMBT8550L

P N P E P I TA X I A L T R A N S I S T O R

Description

The GMBT8550L(large current) is designed for general purpose amplifier applications.

Package Dimensions

SOT-23

TPU.34)QBDLBHF*

Millimeter

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Min.

Max.

2.70

2.40

1.40

0.35

1.90 REF.

1.00

0.10

0.40

0.85

0̓

1.30

0.20

1.15

10̓

0.45

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

+150

-55 ~ +150

-40

Unit

Tstg

VCBO

VCEO

VEBO

-25

-6

1.5

Total Power Dissipation

250

Characteristics at Ta = 25к

Symbol

Min.

-40

-25

-6

Typ.

Max.

Unit

Test Conditions

BVCBO

IC=-100uA

IC=-2mA

BVCEO

BVEBO

ICBO

IEBO

IE=-100uA

-100

-0.5

-1.2

-1

VCB=-35V, IE=0

VEB=-6V,IC=0

VCE(sat)

VBE(sat)

VBE(on)

hFE

IC=-800mA, IB=-80mA

VCE=-1V,IC=-10mA

120

100

VCE=-1V, IC=-5mA

hFE

500

VCE=-1V, IC=-100mA

VCE=-1V, IC=-800mA

VCE=-10V, IC=-20mA, f=100MHz

VCB=-10V, f=1MHz

hFE

MHz

Cob

Classification Of hFE

Rank

hFE

BLC

BLD

160 - 300

BLE

250 - 500

120 - 200

GMBT8550L

Page : 1/2

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