Datasheet > GMBT3838

GMBT3838

更新时间： 2024-11-09 03:39:39

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	332K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GMBT3838 数据手册

ISSUED DATE :2005/05/09

REVISED DATE :

GTM

CORPORATION

GMBT3838

N P N E P I T AX I A L P L A N A R T R A N S I S T O R

Description

The GMBT3838 is designed for high frequency amplifier transistor.

Features

ԦHigh transition frequency

ԦSmall rbb’-Cc and high gain

ԦSmall NF

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

1.30

0.20

0.10

0.40

0.85

0̓

1.15

10̓

0.45

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Tstg

VCBO

VCEO

VEBO

Ratings

+150

-55~+150

Unit

200

Total Power Dissipation

Electrical Characteristics(Ta = 25к,unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

=10uA, I

=1mA, I

=10uA,I

CB=10V, I

EB=2V, I

E=0

BVCEO

BVEBO

B=0

CBO

500

400

E=0

EBO

CE(sat)

=10mA, I

CE=10V, I

=5mA

=10mA, f=500MHz

1.4

3.2

0.8

GHz

Cob

rbb-Cc

1.5

CB=10V, f=1MHz

=10mA, f=31.8MHz

VCE=6V, IC=2mA, f=500MHz, Rg=50ꢀ

VCB=10V, IC

3.5

Classification Of hFE

Rank

Range

56 ~ 220

200 ~ 400

GMBT3838

Page: 1/2

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