Datasheet > GMBT2714

GMBT2714

更新时间： 2024-11-07 03:39:39

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	220K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GMBT2714 数据手册

ISSUED DATE :2005/11/22

REVISED DATE :

GTM

CORPORATION

GMBT2714

N P N E P I TA X I A L P L A N A R T R A N S I S T O R

Description

The GMBT2714 is designed for use in FM, RF, MIX and IF amplifier application.

Features

ԦHigh frequency

ԦVery low capacitance

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

REF.

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

2.70

2.40

1.40

0.35

Max.

3.10

2.80

1.60

0.50

0.10

0.55

1.00

1.30

0.20

0.10

0.40

0.85

0°

1.15

10°

0.45

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

+150

Unit

Tstg

-55~+150

VCBO

VCEO

VEBO

225

Total Power Dissipation

Electrical Characteristics (Ta = 25к, unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

=100uA, I

=1mA, I =0

=10uA, I =0

CB=18V, I =0

EB=4V, I =0

=4mA, I =0.4mA

CE=10V, I =4mA

CE=6V, I =1mA

CE=10V, I =4mA, f=100MHz

CB=10V, f=1MHz

E=0

BVCEO

BVEBO

CBO

EBO

500

950

200

CE(sat)

BE(on)

650

MHz

Cob

0.8

Classification Of hFE

Rank

Range

40 ~ 80

70 ~ 140

100 ~ 200

GMBT2714

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