Datasheet > GMBT2222A

GMBT2222A

更新时间： 2024-11-07 03:39:39

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
4页	281K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GMBT2222A 数据手册

ISSUED DATE :2001/03/12

REVISED DATE :2005/06/27B

GTM

CORPORATION

GMBT2222A

N P N E P I T AX I A L P L A N A R T R A N S I S T O R

Description

The GMBT2222A is designed for general purpose amplifier and high speed, medium-power switching applications.

Features

High frequency current gain

High speed switching

For complementary use with PNP type GMBT2907A

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min. Max.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

2.70

2.40

1.40

0.35

1.00

0.10

0.40

0.85

0̓

1.30

0.20

1.15

10̓

0.45

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Symbol

Ratings

Unit

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage at Ta=25к

Collector to Emitter Voltage at Ta=25к

Emitter to Base Voltage at Ta=25к

Collector Current at Ta=25к

VCBO

VCEO

VEBO

600

225

Total Power Dissipation at Ta=25к

Characteristics at Ta = 25к

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

IC=100uA , IE=0

IC=10mA, IB=0

IE=10uA, IC=0

VCB=60V, IE=0

BVCEO

BVEBO

ICBO

500

1.0

1.2

2.0

ICEX

VCE=60V ,VEB(OFF)=3V

VEB=3V, IC=0

IEBO

*VCE(sat)1

*VCE(sat)2

*VBE(sat)1

*VBE(sat)2

IC=380mA, IB=10mA

IC=500mA, IB=50mA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

VCE=10V, IC=100uA

VCE=10V, IC=1mA

*hFE

100

300

VCE=10V, IC=10mA

VCE=10V, IC=150mA

VCE=10V, IC=500mA

VCB=20V, IC=20mA, f=100MHz

VCB=10V, IE=0, f=1MHz

300

MHz

Cob

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

GMBT2222A

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