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FZT558TA PDF预览

FZT558TA

更新时间: 2024-11-01 13:07:55
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率双极晶体管光电二极管高压局域网
页数 文件大小 规格书
2页 113K
描述
Power Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,

FZT558TA 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
Factory Lead Time:13 weeks风险等级:0.99
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

FZT558TA 数据手册

 浏览型号FZT558TA的Datasheet PDF文件第2页 
SOT223 PNP SILICON PLANAR MEDIUM  
POWER HIGH VOLTAGE TRANSISTOR  
ISSUE 2 – DECEMBER 1995  
FZT558  
FEATURES  
*
*
*
400 Volt VCEO  
C
200mA continuous current  
Ptot= 2 Watt  
E
C
PARTMARKING DETAIL -  
FZT558  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VALUE  
-400  
-400  
-5  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
VCEO  
V
Emitter-Base Voltage  
VEBO  
V
Continuous Collector Current  
Power Dissipation  
IC  
-200  
2
mA  
W
Ptot  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
Tj:Tstg  
= 25°C).  
-55 to +150  
°C  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO -400  
TYP.  
MAX. UNIT  
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
V
V
IC=-100µA  
Collector-Emitter  
Breakdown Voltage  
VBR(CEO)  
-400  
-5  
IC=-10mA*  
Emitter-Base Breakdown V(BR)EBO  
Voltage  
IE=-100µA  
Collector Cut-Off Current ICBO  
Collector Cut-Off Current ICES  
-100  
-100  
-100  
nA  
nA  
nA  
VCB=-320V  
VCE=-320V  
VEB=-4V  
Emitter Cut-Off Current  
IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.2  
-0.5  
V
V
IC=-20mA, IB=-2mA*  
IC=-50mA, IB=-6mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
-0.9  
V
IC=-50mA, IB=-5mA*  
Base-Emitter  
Turn On Voltage  
-0.9  
V
IC=-50mA, VCE=-10V*  
Static Forward Current  
Transfer Ratio  
100  
100  
15  
IC=-1mA, VCE=-10V  
IC=-50mA, VCE=-10V*  
IC=-100mA, VCE=-10V*  
300  
5
Transition  
Frequency  
fT  
50  
MHz  
pF  
IC=-10mA, VCE=-20V  
f=20MHz  
Collector-Base  
Breakdown Voltage  
Cobo  
VCB=-20V, f=1MHz  
Switching times  
ton  
toff  
95  
1600  
ns  
ns  
IC=-50mA, VC=-100V  
IB1=5mA, IB2=-10mA  
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 192  

FZT558TA 替代型号

型号 品牌 替代类型 描述 数据表
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