是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | MODULE | 包装说明: | MODULE-5 |
针数: | 5 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.57 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 900 A | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X5 | 元件数量: | 1 |
端子数量: | 5 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2750 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 830 ns | 标称接通时间 (ton): | 400 ns |
VCEsat-Max: | 2.15 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FZ600R12KE3HOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | |
FZ600R12KE4 | INFINEON |
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62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode | |
FZ600R12KE4HOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | |
FZ600R12KF2 | ETC |
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TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 600A I(C) | |
FZ600R12KP4 | INFINEON |
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62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode | |
FZ600R12KP4HOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 2400A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | |
FZ600R12KS4 | EUPEC |
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62mm C-series module with the fast IGBT2 for high-frequency switching | |
FZ600R12KS4 | INFINEON |
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Fast short tail IGBT chip | |
FZ600R12KS4HOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 700A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | |
FZ600R17KE3 | INFINEON |
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IGBT-modules |