型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQD11P06TF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Me |
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FQD11P06TM | FAIRCHILD |
获取价格 |
暂无描述 |
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FQD11P06TM | ONSEMI |
获取价格 |
功率 MOSFET,P 沟道,QFET®,-60 V,-9.4 A,185 mΩ,DPAK |
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FQD11P06TM_SB82077 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Me |
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FQD1200MK5 | NXP |
获取价格 |
Hybrid analog/digital video module |
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FQD12N20 | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET |
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FQD12N20L | FAIRCHILD |
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200V LOGIC N-Channel MOSFET |
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FQD12N20LTM | FAIRCHILD |
获取价格 |
200V Logic Level N-Channel MOSFET |
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FQD12N20LTM | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,逻辑电平,QFET®,200 V,9.0 A,280 mΩ, |
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FQD12N20LTM_F085 | ONSEMI |
获取价格 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Meta |
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