FPD4000AS

更新时间： 2024-02-13 03:10:47

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
3页	199K
描述
2.5W PACKAGED POWER PHEMT

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中文翻译

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技术参数
数据手册

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FPD4000AS 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.06	Base Number Matches：	1

FPD4000AS 数据手册

FPD4000AS

2.5W PACKAGED POWER PHEMT

• PERFORMANCE (1.8 GHz)

♦ 34.5 dBm Output Power (P_1dB

)

♦ 12 dB Power Gain (G_1dB

♦ 45 dBm Output IP3

♦ 8V Operation

)

♦ 50% Power-Added Efficiency

♦ Evaluation Boards Available

♦ Design Data Available on Website

♦ Suitable for applications to 5 GHz

SEE PACKAGE OUTLINE FOR

MARKING CODE

• DESCRIPTION AND APPLICATIONS

The FPD4000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron

Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount

package has been optimized for low parasitics.

Typical applications include drivers or output stages in PCS/Cellular base station transmitter

amplifiers, as well as other power applications in WLL/WLAN amplifiers.

• ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max Units

RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL

Power at 1dB Gain Compression

P_1dB

G_1dB

MSG

PAE

IM3

V_DS= 8V; I_DQ= 700 mA

Γ_Sand Γ_Ltuned for Optimum IP3

V_DS= 8V; I_DQ= 700 mA

Γ_Sand Γ_Ltuned for Optimum IP3

V_DS= 8V; I_DQ= 700 mA

P_IN= 0dBm, 50Ω system

V_DS= 8V; I_DQ= 700 mA

Γ_Sand Γ_Ltuned for Optimum IP3

33.5

10.5

34.5

dBm

Power Gain at dB Gain Compression

Maximum Stable Gain

S₂₁/S₁₂

Power-Added Efficiency

at 1dB Gain Compression

3^rd-Order Intermodulation Distortion

Γ_Sand Γ_Ltuned for Optimum IP3

_DS= 8V; I_DQ= 700 mA

P_OUT= 23 dBm (single-tone level)

-46

dBc

Saturated Drain-Source Current

Maximum Drain-Source Current

Transconductance

Gate-Source Leakage Current

Pinch-Off Voltage

I_DSS

I_MAX

G_M

I_GSO

|V_P|

V_DS= 1.3 V; V_GS= 0 V

V_DS= 1.3 V; V_GS≅ +1 V

V_DS= 1.3 V; V_GS= 0 V

V_GS= -3 V

V_DS= 1.3 V; I_DS= 8 mA

I_GS= 8 mA

1.9

2.3

3.6

2.4

0.9

2.65

µA

170

1.4

0.7

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistivity (channel-to-case)

|V_BDGS

|V_BDGD

I_GD= 8 mA

See Note on following page

Θ_CC

°C/W

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http:// www.filtronic.co.uk/semis

Revised: 05/26/05

Email: sales@filcsi.com

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