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FJAF4310O PDF预览

FJAF4310O

更新时间: 2024-09-15 21:54:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
5页 88K
描述
NPN Epitaxial Silicon Transistor

FJAF4310O 技术参数

生命周期:Obsolete零件包装代码:TO-3PF
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.67Is Samacsys:N
最大集电极电流 (IC):10 A集电极-发射极最大电压:140 V
配置:SINGLE最小直流电流增益 (hFE):70
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):80 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHzBase Number Matches:1

FJAF4310O 数据手册

 浏览型号FJAF4310O的Datasheet PDF文件第2页浏览型号FJAF4310O的Datasheet PDF文件第3页浏览型号FJAF4310O的Datasheet PDF文件第4页浏览型号FJAF4310O的Datasheet PDF文件第5页 
FJAF4310  
Audio Power Amplifier  
High Current Capability : I =10A  
High Power Dissipation  
Wide S.O.A  
C
Complement to FJAF4210  
TO-3PF  
1
1.Base 2.Collector 3.Emitter  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
200  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Base Current (DC)  
CBO  
140  
V
CEO  
EBO  
6
V
I
I
10  
A
C
1.5  
A
B
P
Collector Dissipation (T =25°C)  
80  
W
C
C
R
Junction to Case  
1.48  
150  
°C/W  
°C  
°C  
θJC  
T
T
Junction Temperature  
Storage Temperature  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
I =5mA, I =0  
200  
140  
6
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
Collector-Emitter Breakdown Voltage I =50mA, R =∞  
C BE  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
I =5mA, I =0  
V
E
C
I
I
V
=200V, I =0  
10  
10  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
E
V
V
=6V, I =0  
C
h
* DC Current Gain  
=4V, I =3A  
50  
180  
0.5  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I =5A, I =0.5A  
V
CE  
C
B
C
V
=10V, f=1MHz  
250  
30  
pF  
ob  
CB  
CE  
f
Current Gain Bandwidth Product  
V
=5V, I =1A  
MHz  
T
C
* Pulse Test : PW=20µs  
h
Classification  
FE  
Classification  
R
O
Y
h
50 ~ 100  
70 ~ 140  
90 ~ 180  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A, November 2002  

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