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FJAF6820 PDF预览

FJAF6820

更新时间: 2024-11-08 22:05:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 显示器高压
页数 文件大小 规格书
5页 114K
描述
High Voltage Color Display Horizontal Deflection Output

FJAF6820 数据手册

 浏览型号FJAF6820的Datasheet PDF文件第2页浏览型号FJAF6820的Datasheet PDF文件第3页浏览型号FJAF6820的Datasheet PDF文件第4页浏览型号FJAF6820的Datasheet PDF文件第5页 
FJAF6820  
High Voltage Color Display Horizontal  
Deflection Output  
High Collector-Base Breakdown Voltage : BV  
= 1500V  
CBO  
Low Saturation Voltage : V (sat) = 3V (Max.)  
For Color Monitor  
CE  
TO-3PF  
1.Base 2.Collector 3.Emitter  
1
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Rating  
1500  
750  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
V
V
CBO  
CEO  
EBO  
6
V
I
I
20  
A
C
*
30  
A
CP  
P
60  
W
°C  
°C  
C
J
T
T
150  
-55 ~ 150  
STG  
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
1
Units  
mA  
µA  
mA  
V
I
I
I
Collector Cut-off Current  
V
V
V
=1400V, R =0  
CES  
CB  
CB  
EB  
BE  
Collector Cut-off Current  
=800V, I =0  
10  
1
CBO  
EBO  
E
Emitter Cut-off Current  
=4V, I =0  
C
BV  
BV  
BV  
Collector-Base Breakdown Voltage  
Collector-EmitterBreakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
I =500µA, I =0  
1500  
750  
6
CBO  
CEO  
EBO  
C
E
I =5mA, I =0  
V
C
B
I =500µA, I =0  
V
E
C
h
h
h
V
V
V
=5V, I =1A  
8
6
5.5  
FE1  
CE  
CE  
CE  
C
=5V, I =8.5A  
10  
8.5  
FE2  
FE3  
C
=5V, I =11A  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Storage Time  
I =11A, I =2.75A  
3
V
V
CE  
C
B
I =11A, I =2.75A  
1.5  
3
BE  
C
B
t
*
V
=200V, I =10A, R =20  
µs  
µs  
STG  
CC  
C
L
I
=2.0A, I = - 4.0A  
B2  
t *  
Fall Time  
B1  
0.15  
0.2  
F
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Typ  
Max  
2.08  
Units  
°C/W  
R
Thermal Resistance, Junction to Case  
θjC  
©2002 Fairchild Semiconductor Corporation  
Rev. A, September2002  

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