FJAF4310Y

更新时间： 2024-11-05 21:54:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率双极晶体管局域网
页数	文件大小	规格书
5页	88K
描述
NPN Epitaxial Silicon Transistor

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中文翻译

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技术参数
数据手册

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FJAF4310Y 技术参数

生命周期：	Obsolete	零件包装代码：	TO-3PF
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.36	Is Samacsys：	N
Base Number Matches：	1

FJAF4310Y 数据手册

FJAF4310

Audio Power Amplifier

•

High Current Capability : I =10A

High Power Dissipation

Wide S.O.A

Complement to FJAF4210

TO-3PF

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

200

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Base Current (DC)

CBO

140

CEO

EBO

1.5

Collector Dissipation (T =25°C)

Junction to Case

1.48

150

°C/W

°C

θJC

Junction Temperature

Storage Temperature

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

I =5mA, I =0

200

140

CBO

CEO

EBO

Collector-Emitter Breakdown Voltage I =50mA, R =∞

C BE

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

I =5mA, I =0

=200V, I =0

µA

CBO

EBO

=6V, I =0

* DC Current Gain

=4V, I =3A

180

0.5

(sat)

Collector-Emitter Saturation Voltage

Output Capacitance

I =5A, I =0.5A

=10V, f=1MHz

250

Current Gain Bandwidth Product

=5V, I =1A

MHz

* Pulse Test : PW=20µs

Classification

50 ~ 100

70 ~ 140

90 ~ 180

Rev. A, November 2002

12 3 4 5

中文翻译

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