FGPF4533TU

更新时间： 2024-11-02 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		光电二极管双极性晶体管
页数	文件大小	规格书
8页	320K
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数据手册

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FGPF4533TU 数据手册

August 2010

FGPF4533

330V, PDP IGBT

Features

General Description

•

High current capability

Low saturation voltage: V

High input impedance

Fast switching

Using Novel Trench IGBT Technology, Fairchild’s new series of

trench IGBTs offer the optimum performance for PDP applica-

tions where low conduction and switching losses are essential.

=1.55 V @ IC = 50 A

CE (sat)

RoHS compliant

Applications

•

PDP System

TO-220F

(Retractable)

G C E

Absolute Maximum Ratings

Symbol

Description

Ratings

330

Units

V_CES

Collector to Emitter Voltage

Gate to Emitter Voltage

Collector Current

V_GES

± 30

@ T_C= 25^oC

200

I_{C pulse(1)*}

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

@ T_C= 25^oC

@ T_C= 100^oC

28.4

^oC

P_D

11.4

T_J

-55 to +150

T_stg

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

^oC

T_L

300

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

4.4

Units

^oC/W

R_θJC(IGBT)

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

62.5

Notes:

^{(1) Half Sine Wave, D < 0.01, pluse width < 5}μsec

* Ic_pluse limited by max Tj

FGPF4533 Rev. B

www.fairchildsemi.com

12 3 4 5 6 7 8

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