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FGPF45N45TTU PDF预览

FGPF45N45TTU

更新时间: 2024-11-02 21:07:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网电动机控制瞄准线晶体管
页数 文件大小 规格书
7页 629K
描述
Insulated Gate Bipolar Transistor, 45A I(C), 450V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN

FGPF45N45TTU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220F, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.69
其他特性:LOW CONDUCTION LOSS外壳连接:ISOLATED
最大集电极电流 (IC):45 A集电极-发射极最大电压:450 V
配置:SINGLE最大降落时间(tf):330 ns
门极发射器阈值电压最大值:5.5 V门极-发射极最大电压:30 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):51.6 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):412 ns
标称接通时间 (ton):112 nsBase Number Matches:1

FGPF45N45TTU 数据手册

 浏览型号FGPF45N45TTU的Datasheet PDF文件第2页浏览型号FGPF45N45TTU的Datasheet PDF文件第3页浏览型号FGPF45N45TTU的Datasheet PDF文件第4页浏览型号FGPF45N45TTU的Datasheet PDF文件第5页浏览型号FGPF45N45TTU的Datasheet PDF文件第6页浏览型号FGPF45N45TTU的Datasheet PDF文件第7页 
April 2009  
FGPF45N45T  
tm  
450V, 45A PDP Trench IGBT  
Features  
General Description  
High Current Capability  
Using Novel Trench IGBT Technology, Fairchild’s new sesries of  
trench IGBTs offer the optimum performance for PDP applica-  
tions where low conduction and switching losses are essential.  
Low saturation voltage: VCE(sat) =1.6V @ IC = 45A  
High input impedance  
Fast switching  
Applications  
PDP System  
C
TO-220F  
G
1
1.Gate 2.Collector 3.Emitter  
E
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
450  
Units  
VCES  
Collector to Emitter Voltage  
Gate to Emitter Voltage  
Pulsed Collector Current  
V
V
A
VGES  
±30  
@ TC = 25oC  
@ TC = 25oC  
@ TC = 100oC  
ICM (1)  
180  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
51.6  
W
W
oC  
oC  
PD  
20.6  
TJ  
-55 to +150  
-55 to +150  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
oC  
TL  
300  
Notes:  
1: Repetitive test , Pulse width=100usec , Duty=0.1  
* Ic_pluse limited by max Tj  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
2.42  
Units  
oC/W  
oC/W  
RθJC(IGBT)  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
-
-
62.5  
©2009 Fairchild Semiconductor Corporation  
FGPF45N45T Rev. A  
1
www.fairchildsemi.com  

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Insulated Gate Bipolar Transistor, 300V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO-