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FGPF7N60RUFDTU PDF预览

FGPF7N60RUFDTU

更新时间: 2024-11-19 03:24:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
9页 902K
描述
600V, 7A RUF IGBT CO-PAK

FGPF7N60RUFDTU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.8
其他特性:HIGH SPEED外壳连接:ISOLATED
最大集电极电流 (IC):14 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):280 ns
门极发射器阈值电压最大值:8 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):41 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):405 ns
标称接通时间 (ton):135 ns

FGPF7N60RUFDTU 数据手册

 浏览型号FGPF7N60RUFDTU的Datasheet PDF文件第2页浏览型号FGPF7N60RUFDTU的Datasheet PDF文件第3页浏览型号FGPF7N60RUFDTU的Datasheet PDF文件第4页浏览型号FGPF7N60RUFDTU的Datasheet PDF文件第5页浏览型号FGPF7N60RUFDTU的Datasheet PDF文件第6页浏览型号FGPF7N60RUFDTU的Datasheet PDF文件第7页 
May 2006  
FGPF7N60RUFD  
tm  
600V, 7A RUF IGBT CO-PAK  
Features  
Applications  
High speed switching  
Motor controls and general purpose inverters.  
Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A  
High input impedance  
Description  
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides  
low conduction and switching losses.The device is designed for  
Motor applications where ruggedness is a required feature.  
CO-PAK, IGBT with FRD : trr = 50 ns (typ.)  
Short Circuit rated  
C
G
TO-220F  
1
1.Gate 2.Collector 3.Emitter  
E
Absolute Maximum Ratings  
Symbol  
Description  
FGP7N60RUFD  
Units  
V
VCES  
VGES  
IC  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
600  
± 20  
V
Collector Current  
@ TC  
=
25°C  
14  
A
Collector Current  
@ TC = 100°C  
7
A
ICM (1)  
IF  
Pulsed Collector Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
21  
A
@ TC = 100°C  
12  
A
IFM  
PD  
60  
41  
A
@ TC  
=
25°C  
W
W
°C  
°C  
°C  
@ TC = 100°C  
16  
TJ  
-55 to +150  
-55 to +150  
300  
Tstg  
TL  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
RθJC(IGBT)  
RθJC(DIODE)  
RθJA  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Case  
Typ.  
Max.  
Units  
--  
--  
--  
3.0  
4.2  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
62.5  
©2006 Fairchild Semiconductor Corporation  
FGPF7N60RUFD Rev. A  
1
www.fairchildsemi.com  

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