Datasheet > FGPF50N30T

FGPF50N30T

更新时间： 2024-11-23 03:36:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		光电二极管双极性晶体管
页数	文件大小	规格书
7页	569K
描述
300V, 50A PDP IGBT

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数据手册

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FGPF50N30T 数据手册

January 2008

FGPF50N30T

300V, 50A PDP IGBT

Features

General Description

•

High current capability

Using Novel Trench IGBT Technology, Fairchild’s new sesries of

trench IGBTs offer the optimum performance for PDP applica-

tions where low conduction and switching losses are essential.

Low saturation voltage: V_CE(sat)=1.4V @ I_C= 30A

High input impedance

Fast switching

RoHS compliant

Applications

•

PDP System

TO-220F

1.Gate 2.Collector 3.Emitter

Absolute Maximum Ratings

Symbol

Description

Ratings

300

Units

V_CES

Collector to Emitter Voltage

Gate to Emitter Voltage

Pulsed Collector Current

V_GES

± 30

@ T_C= 25^oC

@ T_C= 100^oC

I_{CM (1)}

120

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

46.8

^oC

P_D

18.7

T_J

-55 to +150

T_stg

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

^oC

T_L

300

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

2.67

Units

^oC/W

R_θJC(IGBT)

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

62.5

Notes:

1: Repetitive test , Pulse width=100usec , Duty=0.1

* I _pluse limited by max Tj

FGPF50N30T Rev. A

www.fairchildsemi.com

12 3 4 5 6 7

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