是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-220AB |
包装说明: | ROHS COMPLIANT, TO-220F, 3 PIN | 针数: | 3 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.63 |
其他特性: | LOW CONDUCTION LOSS | 最大集电极电流 (IC): | 50 A |
集电极-发射极最大电压: | 330 V | 配置: | SINGLE |
门极发射器阈值电压最大值: | 4.3 V | 门极-发射极最大电压: | 30 V |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 43 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 365 ns |
标称接通时间 (ton): | 46 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FGPF70N30 | FAIRCHILD |
获取价格 |
300V, 70A PDP IGBT | |
FGPF70N30TDTU | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 300V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO- | |
FGPF70N30TTU | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 300V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO- | |
FGPF70N30TU | FAIRCHILD |
获取价格 |
300V, 70A PDP IGBT | |
FGPF70N33BT | FAIRCHILD |
获取价格 |
330V, 70A PDP IGBT | |
FGPF70N33BTRDTU | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 220A I(C), 330V V(BR)CES, N-Channel | |
FGPF70N33BTTU | FAIRCHILD |
获取价格 |
330V, 70A PDP IGBT | |
FGPF7N60LSD | FAIRCHILD |
获取价格 |
600V, 7A Low Saturation IGBT CO-PAK | |
FGPF7N60RUFD | FAIRCHILD |
获取价格 |
600V, 7A RUF IGBT CO-PAK | |
FGPF7N60RUFDTU | FAIRCHILD |
获取价格 |
600V, 7A RUF IGBT CO-PAK |