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FGPF50N33BTTU PDF预览

FGPF50N33BTTU

更新时间: 2024-11-02 06:59:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率控制光电二极管瞄准线双极性晶体管局域网
页数 文件大小 规格书
8页 656K
描述
330V, 50A PDP IGBT

FGPF50N33BTTU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, TO-220F, 3 PIN针数:3
Reach Compliance Code:not_compliant风险等级:5.63
其他特性:LOW CONDUCTION LOSS最大集电极电流 (IC):50 A
集电极-发射极最大电压:330 V配置:SINGLE
门极发射器阈值电压最大值:4.3 V门极-发射极最大电压:30 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):43 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):365 ns
标称接通时间 (ton):46 nsBase Number Matches:1

FGPF50N33BTTU 数据手册

 浏览型号FGPF50N33BTTU的Datasheet PDF文件第2页浏览型号FGPF50N33BTTU的Datasheet PDF文件第3页浏览型号FGPF50N33BTTU的Datasheet PDF文件第4页浏览型号FGPF50N33BTTU的Datasheet PDF文件第5页浏览型号FGPF50N33BTTU的Datasheet PDF文件第6页浏览型号FGPF50N33BTTU的Datasheet PDF文件第7页 
April 2009  
FGPF50N33BT  
tm  
330V, 50A PDP IGBT  
Features  
General Description  
High current capability  
Using Novel Trench IGBT Technology, Fairchild’s new series of  
trench IGBTs offer the optimum performance for PDP applica-  
tions where low conduction and switching losses are essential.  
Low saturation voltage: VCE(sat) =1.6V @ IC = 50A  
High input impedance  
Fast switching  
Applications  
PDP System  
TO-220F  
G C E  
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
330  
Units  
VCES  
VGES  
IC  
ICpulse (1)*  
ICpulse (2)*  
Collector to Emitter Voltage  
Gate to Emitter Voltage  
Collector Current  
V
V
A
± 30  
@ TC = 25oC  
@ TC = 25oC  
50  
Pulsed Collector Current  
Pulsed Collector Current  
120  
160  
A
A
@ TC = 25oC  
@ TC = 25oC  
@ TC = 100oC  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
43  
W
W
oC  
oC  
PD  
17.2  
TJ  
-55 to +150  
-55 to +150  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
oC  
TL  
300  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
2.9  
Units  
oC/W  
oC/W  
RθJC(IGBT)  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
-
-
62.5  
Notes:  
1: Repetitive test , Pulse width=100usec , Duty=0.1  
2: Half Sine Wave, D < 0.01, pluse width < 10usec  
*Ic_pluse limited by max Tj  
©2009 Fairchild Semiconductor Corporation  
FGPF50N33BT Rev. A  
1
www.fairchildsemi.com  

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