Datasheet > 晶体管 > IGBT> FGPF70N30

FGPF70N30

更新时间： 2024-11-23 03:36:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		光电二极管双极性晶体管
页数	文件大小	规格书
7页	784K
描述
300V, 70A PDP IGBT

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数据手册

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FGPF70N30 数据手册

October 2006

FGPF70N30

300V, 70A PDP IGBT

Features

General Description

•

High Current Capability

Low saturation voltage: V_CE(sat) =1.4V @ I_C= 40A

High Input Impedance

Employing Unified IGBT Technology, Fairchild's PDP IGBTs

provides low conduction and switching loss. FGPF70N30 offers

the optimum solution for PDP applications where low-condution

loss is essential.

Fast switching

RoHS Complaint

Application

. PDP System

TO-220F

1.Gate 2.Collector 3.Emitter

Absolute Maximum Ratings

Symbol

Description

FGPF70N30

Units

V_CES

Collector-Emitter Voltage

Gate-Emitter Voltage

300

±30

V_GES

I_{C pulse(1)}

P_D

Pulsed Collector Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

@ T_C

@ T_C= 100^oC

25^oC

160

20.8

T_J

-55 to +150

^oC

T_stg

T_L

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

2.4

Units

^oC/W

R_θJC(IGBT)

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

62.5

Notes:

(1)Repetitive test , pluse width = 100usec , Duty = 0.1

* Ic_pluse limited by max Tj

FGPF70N30 Rev. A

www.fairchildsemi.com

12 3 4 5 6 7

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