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FGPF70N33BT PDF预览

FGPF70N33BT

更新时间: 2024-11-02 06:59:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管双极性晶体管
页数 文件大小 规格书
8页 692K
描述
330V, 70A PDP IGBT

FGPF70N33BT 数据手册

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November 2008  
FGPF70N33BT  
tm  
330V, 70A PDP IGBT  
Features  
General Description  
High current capability  
Using Novel Trench IGBT Technology, Fairchild’s new series of  
trench IGBTs offer the optimum performance for PDP  
applications where low conduction and switching losses are  
essential.  
Low saturation voltage: VCE(sat) =1.7V @ IC = 70A  
High input impedance  
Fast switching  
RoHS Compliant  
Applications  
PDP System  
TO-220F  
G C E  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
Ratings  
330  
Units  
VCES  
Collector to Emitter Voltage  
V
V
A
VGES  
Gate to Emitter Voltage  
Pulsed Collector Current  
± 30  
@ TC = 25oC  
ICpulse(1)  
*
160  
@ TC = 25oC  
@ TC = 25oC  
@ TC = 100oC  
IC pulse(2)  
*
Pulsed Collector Current  
220  
A
Maximum Power Dissipation  
Maximum Power Dissipation  
48  
19  
W
W
PD  
TJ, Tstg  
TL  
Operating Junction Temperature and Storage Temperrature  
-55 to +150  
oC  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
300  
oC  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
2.62  
40  
Units  
oC/W  
oC/W  
RθJC(IGBT)  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
--  
--  
Notes:  
1: Repetitive test , Pulse width=100usec , Duty=0.1  
2: Half Sine Wave, D< 0.01, pluse width < 5usec  
*I _pulse limited by max Tj  
C
©2008 Fairchild Semiconductor Corporation  
FGPF70N33BT Rev. A  
1
www.fairchildsemi.com  

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