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FGPF70N30TU PDF预览

FGPF70N30TU

更新时间: 2024-11-02 03:36:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率控制光电二极管瞄准线双极性晶体管局域网
页数 文件大小 规格书
7页 784K
描述
300V, 70A PDP IGBT

FGPF70N30TU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.68其他特性:LOW CONDUCTION LOSS
外壳连接:ISOLATED集电极-发射极最大电压:300 V
配置:SINGLEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):354 ns标称接通时间 (ton):101 ns
Base Number Matches:1

FGPF70N30TU 数据手册

 浏览型号FGPF70N30TU的Datasheet PDF文件第2页浏览型号FGPF70N30TU的Datasheet PDF文件第3页浏览型号FGPF70N30TU的Datasheet PDF文件第4页浏览型号FGPF70N30TU的Datasheet PDF文件第5页浏览型号FGPF70N30TU的Datasheet PDF文件第6页浏览型号FGPF70N30TU的Datasheet PDF文件第7页 
October 2006  
FGPF70N30  
300V, 70A PDP IGBT  
Features  
General Description  
High Current Capability  
Low saturation voltage: VCE(sat) =1.4V @ IC = 40A  
High Input Impedance  
Employing Unified IGBT Technology, Fairchild's PDP IGBTs  
provides low conduction and switching loss. FGPF70N30 offers  
the optimum solution for PDP applications where low-condution  
loss is essential.  
Fast switching  
RoHS Complaint  
Application  
. PDP System  
TO-220F  
1
1.Gate 2.Collector 3.Emitter  
Absolute Maximum Ratings  
Symbol  
Description  
FGPF70N30  
Units  
V
VCES  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
300  
±30  
VGES  
IC pulse(1)  
PD  
V
Pulsed Collector Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
@ TC  
@ TC  
@ TC = 100oC  
=
=
25oC  
25oC  
160  
A
52  
W
20.8  
W
TJ  
-55 to +150  
-55 to +150  
oC  
oC  
Tstg  
TL  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
300  
oC  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
2.4  
Units  
oC/W  
oC/W  
RθJC(IGBT)  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
--  
--  
62.5  
Notes:  
(1)Repetitive test , pluse width = 100usec , Duty = 0.1  
* Ic_pluse limited by max Tj  
©2006 Fairchild Semiconductor Corporation  
FGPF70N30 Rev. A  
1
www.fairchildsemi.com  

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