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FGPF10N60UNDF PDF预览

FGPF10N60UNDF

更新时间: 2024-11-05 12:22:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
9页 826K
描述
600V, 10A Short Circuit Rated IGBT

FGPF10N60UNDF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220F
包装说明:ROHS COMPLIANT, PLASTIC, SC-91A, TO-220F, FULL PACK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.7
外壳连接:ISOLATED最大集电极电流 (IC):20 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
最大降落时间(tf):24.8 ns门极发射器阈值电压最大值:8.5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):42 W子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):89.3 ns
标称接通时间 (ton):15.4 nsBase Number Matches:1

FGPF10N60UNDF 数据手册

 浏览型号FGPF10N60UNDF的Datasheet PDF文件第2页浏览型号FGPF10N60UNDF的Datasheet PDF文件第3页浏览型号FGPF10N60UNDF的Datasheet PDF文件第4页浏览型号FGPF10N60UNDF的Datasheet PDF文件第5页浏览型号FGPF10N60UNDF的Datasheet PDF文件第6页浏览型号FGPF10N60UNDF的Datasheet PDF文件第7页 
May 2012  
FGPF10N60UNDF  
600V, 10A  
Short Circuit Rated IGBT  
Applications  
Home appliance inverter-driven appplication  
- Air Conditioner, Washing Machine, Refrigerator,  
Dish Washer  
Features  
Industrial Inverter - Sewing Machine, CNC  
Short circuit rated 10us  
High current capability  
High input impedance  
Fast switching  
General Description  
RoHS compliant  
Using advanced NPT IGBT Technology, Fairchild’s the NPT  
IGBTs offer the optimum performance for low power inverter-  
driven applications where low-losses and short circuit rugged-  
ness feature are essential.  
C
G
G C E  
TO-220F  
(Retractable)  
E
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
Units  
V
V
V
Collector to Emitter Voltage  
Gate to Emitter Voltage  
Collector Current  
600  
CES  
GES  
± 20  
V
o
@ T = 25 C  
20  
A
C
I
C
o
Collector Current  
@ T = 100 C  
10  
A
C
o
I
I
Pulsed Collector Current  
Diode Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
@ T = 25 C  
30  
10  
A
CM (1)  
C
o
@ T = 25 C  
A
F
C
o
@ T = 25 C  
42  
W
W
C
P
D
o
@ T = 100 C  
17  
C
o
T
-55 to +150  
-55 to +150  
C
J
o
T
C
stg  
Notes:  
1: Repetitive rating: Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Case  
Typ.  
Max.  
Units  
o
R
R
R
(IGBT)  
-
-
-
3.0  
5.6  
C/W  
θJC  
θJC  
θJA  
o
(Diode)  
C/W  
o
Thermal Resistance, Junction to Ambient (PCB Mount)(2)  
62.5  
C/W  
Notes:  
2: Mountde on 1” square PCB (FR4 or G-10 material)  
©2012 Fairchild Semiconductor Corporation  
FGPF10N60UNDF Rev.C0  
1
www.fairchildsemi.com  

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