Datasheet > FGPF30N30D

FGPF30N30D

更新时间： 2024-11-02 03:36:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		光电二极管双极性晶体管
页数	文件大小	规格书
9页	765K
描述
300V, 30A PDP IGBT

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FGPF30N30D 数据手册

April 2007

FGPF30N30D

300V, 30A PDP IGBT

Features

General Description

•

High Current Capability

Low saturation voltage: V_{CE(sat) =}1.4V @ I_C= 20A

High Input Impedance

Employing Unified IGBT Technology, Fairchild's PDP IGBTs

provides low conduction and switching loss. FGPF30N30D

offers the optimum solution for PDP applications where low-

condution loss is essential.

Fast switching

RoHS Complaint

Application

. PDP System

TO-220F

1.Gate 2.Collector 3.Emitter

Absolute Maximum Ratings

Symbol

Description

FGPF30N30D

Units

V_CES

Collector-Emitter Voltage

300

V_GES

I_{C pulse(1)}

I_F

Gate-Emitter Voltage

± 30

Pulsed Collector Current

@ T_C

25^oC

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

@ T_C= 100°C

I_FM

P_D

@ T_C

@ T_C= 100^oC

25^oC

^oC

18.5

T_J

-55 to +150

T_stg

T_L

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

R_θJC(IGBT)

Thermal Resistance, Junction-to-Case

2.7

^oC/W

R_θJC(DIODE)

Thermal Resistance, Junction-to-Case for Diode

Thermal Resistance, Junction-to-Ambient

°C/W

3.0

R_θJA

62.5

^oC/W

Notes:

(1)Repetitive test , pluse width = 100usec , Duty = 0.1

* Ic_pluse limited by max Tj

FGPF30N30D Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...9

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