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FGH50N6S2D_NL

更新时间： 2024-10-01 12:59:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管功率控制瞄准线双极性晶体管栅局域网
页数 文件大小 规格书
8页 171K
描述
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247

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FGH50N6S2D_NL 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
风险等级：5.21Is Samacsys：N
最大集电极电流 (IC)：75 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODE最大降落时间（tf）：100 ns
门极发射器阈值电压最大值：5 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-247JESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：463 W认证状态：Not Qualified
子类别：Insulated Gate BIP Transistors表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：180 ns
标称接通时间 (ton)：28 nsBase Number Matches：1

FGH50N6S2D_NL 数据手册

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August 2003  
FGH50N6S2  
600V, SMPS II Series N-Channel IGBT  
General Description  
Features  
The FGH50N6S2 is a Low Gate Charge, Low Plateau Volt-  
age SMPS II IGBT combining the fast switching speed of  
the SMPS IGBTs along with lower gate charge, plateau  
voltage and avalanche capability (UIS). These LGC devices  
shorten delay times, and reduce the power requirement of  
the gate drive. These devices are ideally suited for high volt-  
age switched mode power supply applications where low  
conduction loss, fast switching times and UIS capability are  
essential. SMPS II LGC devices have been specially de-  
signed for:  
• 100kHz Operation at 390V, 40A  
• 200kHZ Operation at 390V, 25A  
• 600V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125 C  
• Low Gate Charge . . . . . . . . . 70nC at V = 15V  
GE  
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical  
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 480mJ  
• Low Conduction Loss  
•
•
•
•
•
•
Power Factor Correction (PFC) circuits  
Full bridge topologies  
Half bridge topologies  
Push-Pull circuits  
Uninterruptible power supplies  
Zero voltage and zero current switching circuits  
IGBT formerly Developmental Type TA49342  
Package  
Symbol  
TO-247  
E
C
C
G
G
COLLECTOR  
(Back-Metal)  
E
Device Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
BV  
Parameter  
Collector to Emitter Breakdown Voltage  
Collector Current Continuous, T = 25°C  
Ratings  
600  
Units  
V
A
A
A
V
V
CES  
I
75  
C25  
C
I
Collector Current Continuous, T = 110°C  
60  
C110  
C
I
Collector Current Pulsed (Note 1)  
Gate to Emitter Voltage Continuous  
Gate to Emitter Voltage Pulsed  
240  
CM  
V
±20  
GES  
GEM  
V
±30  
SSOA  
Switching Safe Operating Area at T = 150°C, Figure 2  
150A at 600V  
480  
J
E
Pulsed Avalanche Energy, I = 30A, L = 1mH, V = 50V  
mJ  
W
AS  
CE  
DD  
P
Power Dissipation Total T = 25°C  
463  
D
C
Power Dissipation Derating T > 25°C  
3.7  
W/°C  
°C  
C
T
Operating Junction Temperature Range  
Storage Junction Temperature Range  
-55 to 150  
-55 to 150  
J
T
°C  
STG  
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and  
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
1. Pulse width limited by maximum junction temperature.  
©2003 Fairchild Semiconductor Corporation  
FGH50N6S2 RevA3  
12345678

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